20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm •

文件：276.33 Kbytes 页数：14 Pages

NEXPERIA

安世

NPN General Purpose Amplifier

• This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10.

文件：44.49 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

PN100/PN100A/MMBT100/MMBT100A

• This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10.

文件：71.22 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

文件：190.26 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体