丝印：NZ；Package：SOT23；20 V, 3.2 A N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 A

文件：1.07969 Mbytes 页数：16 Pages

NEXPERIA

安世

20 V, 3.2 A N-channel Trench MOSFET

文件：811.41 Kbytes 页数：15 Pages

PHI

PHI

20 V, 3.2 A N-channel Trench MOSFET

文件：403.29 Kbytes 页数：3 Pages

ZPSEMIZP Semiconductor

至尚臻品

20 V, 3.2 A N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Nexperia

安世

20 V, 3.2 A N-channel Trench MOSFET

恩XP