N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：475.81 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

TrenchMOS™ enhanced logic level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV60EN in SOT23. 1.2 Features 1.3 Applications n Surface mount package n Fast switching. n Battery management n High speed switch.

文件：342.03 Kbytes 页数：13 Pages

NEXPERIA

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UTrenchMOS enhanced logic level FET

文件：238.48 Kbytes 页数：12 Pages

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mu TrenchMOS enhanced logic level FET

文件：259.22 Kbytes 页数：12 Pages

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mTrenchMOS??enhanced logic level FET

文件：207.68 Kbytes 页数：3 Pages

ZPSEMIZP Semiconductor

至尚臻品

丝印：HR；Package：TO-236AB；40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFE

文件：272.99 Kbytes 页数：15 Pages

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40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFE

文件：272.99 Kbytes 页数：15 Pages

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N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

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UTrenchMOS enhanced logic level FET

恩XP

40 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Extended temperature range Tj = 175 °C\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C)\n• AEC-Q101 qualified;

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