TrenchMOS™ ultra low level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV40UN in SOT23. 1.2 Features 1.3 Applications n Ultra low level threshold n Surface mount package. n Battery management n High-speed switch.

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

TrenchMOS ultra low level FET

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TrenchMOS??ultra low level FET

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N-Channel 30-V (D-S) MOSFET

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丝印：K8；Package：SOT23；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhan

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, N-channel Trench MOSFET

文件：267.62 Kbytes 页数：15 Pages

PHI

飞利浦

30 V, N-channel Trench MOSFET

文件：267.62 Kbytes 页数：15 Pages

PHI

飞利浦

N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Trench MOSFET technology\n• Low threshold voltage\n• Very fast switching\n• Enhanced power dissipation capability of 1000 mW;

Nexperia

安世