丝印：R5；Package：SOT416；N-channel TrenchMOS ultra low level FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits  Surface mounted package  Low on-state resistance  Footprint 63 smaller than SOT23  Low thre

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N-channel TrenchMOS ultra low level FET

N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

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100 V N-channel Trench MOSFET

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