丝印：1N；Package：DFN2020-6；30 V, dual N-channel Trench MOSFET

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丝印：3A；Package：DFN2020D-6；30 V, dual N-channel Trench MOSFET

文件：734.2 Kbytes 页数：17 Pages

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30 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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30 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Trench MOSFET technology\n• Low threshold voltage\n• Leadless medium power SMD plasticpackage:2×2×0.65mm\n• Tin-plated 100 % solderable side pads for optical solder inspection\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM\n• AEC-Q101 qualified;

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MOSFET 2N-CH 30V 3.1A HUSON6

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