PMBT2907AM

丝印：M4；Package：SOT883；60 V, 600 mA PNP switching transistor

1.Generaldescription PNPswitchingtransistorinanultrasmallDFN1006-3(SOT883)leadlessSurface-MountedDevice (SMD)plasticpackage. NPNcomplement:PMBT2222AM 2.Featuresandbenefits •Highcurrent(max.600mA) •Lowvoltage(max.60V) •LeadlessultrasmallSMDplasticpackage

PMBT2907AM

60 V, 600 mA PNP switching transistor; • High current (max. 600 mA)\n• Low voltage (max. 60 V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.50 mm\n• Power dissipation comparable to SOT23\n• AEC-Q101 qualified\n;

PNP switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package.\n NPN complement: PMBT2222AM\n

PMBT2907AMB

60 V, 600 mA PNP switching transistor; • High current (max. 600 mA)\n• Low voltage (max. 60V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Power dissipation comparable to SOT23\n• AEC-Q101 qualified\n;

PNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package.\n NPN complement: PMBT2222AMB\n

PMBT2907AMB

丝印：0110；Package：SOT883B；60 V, 600 mA PNP switching transistor

1.Generaldescription PNPswitchingtransistorinanultrasmallDFN1006B-3(SOT883B)leadlessSurface-Mounted Device(SMD)plasticpackage. NPNcomplement:PMBT2222AMB 2.Featuresandbenefits •Highcurrent(max.600mA) •Lowvoltage(max.60V) •LeadlessultrasmallSMDplasticpackage

PMBT2907AMBYL

Package：3-XFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PMBT2907AMB/SOT883/XQFN3

Nexperia USA Inc.

PMBT2907AMYL

Package：SC-101，SOT-883；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PMBT2907AM/SOT883/XQFN3

Nexperia USA Inc.