丝印：BF；Package：TSSOP6；40 V, 600 mA, double NPN switching transistor

General description Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double PNP complement: PMBT2907AYS Features and benefits • Double general-purpose switching transistor • High current (max. 600 mA) • Voltage max. 40 V • AEC-Q10

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40 V, 600 mA NPN switching transistor

NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package.\n PNP complement: PMBT2907AM • High current (max. 600 mA)\n• Low voltage (max. 40V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.50 mm\n• Power dissipation comparable to SOT23;

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40 V, 600 mA NPN switching transistor

NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package.\n PNP complement: PMBT2907AMB • High current (max. 600 mA)\n• Low voltage (max. 40V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Power dissipation comparable to SOT23;

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Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 0.6A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 0.6A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 0.6A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司