S2301

N-channelSiCpowerMOSFETbaredie

SD2301

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

SDB2301

Highspeedswitching

SDB2301F

SchottkyBarrierDiode

Features •LowVF:Max.0.45V@IF=1A •Forswitchingpowersupply

SE2301

SOT-23Plastic-EncapsulateMOSFETS

SGM2301

P-ChannelEnhancementModePowerMos.FET

SI2301

P-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •-20V,-2.8A,RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •HighSpeedSwitching •SOT-23Package •MarkingCode:S1 •Epox

SI2301

P-ChannelEnhancementModeFieldEffectTransistor

SI2301

Plastic-EncapsulateMosfets

Plastic-EncapsulateMosfets FEATURES •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •CaseMaterial:MoldedPlastic.

SI2301

HighdensecelldesignforextremelylowRDS(ON)

Plastic-EncapsulateMosfets FEATURES •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •CaseMaterial:MoldedPlastic.