800V N-Channel Enhancement Mode MOSFET

FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：227.44 Kbytes 页数：6 Pages

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700V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@2A

文件：458.6 Kbytes 页数：8 Pages

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丝印：P2NA70；Package：TO-220AB；700V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@2A

文件：458.6 Kbytes 页数：8 Pages

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700V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@2A

文件：458.6 Kbytes 页数：8 Pages

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60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：801.72 Kbytes 页数：8 Pages

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丝印：P35N06A；Package：TO-220AB；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：801.72 Kbytes 页数：8 Pages

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800V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@1.5A

文件：467.25 Kbytes 页数：8 Pages

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丝印：P3NA80；Package：TO-220AB；800V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@1.5A

文件：467.25 Kbytes 页数：8 Pages

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60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：569.58 Kbytes 页数：8 Pages

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丝印：P40N06A；Package：TO-220AB；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：569.58 Kbytes 页数：8 Pages

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