丝印：P3NA80；Package：TO-220AB；800V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@1.5A

文件：467.25 Kbytes 页数：8 Pages

PANJIT

強茂

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：200.79 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体