PJP35N06A

60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

PJP35N06A_T0_00001

丝印：P35N06A；Package：TO-220AB；60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

35N06

60VN-ChannelPowerMosfet

GeneralDescription TheseN-channelenhancementmodepowermosfetsused advancedtrenchtechnologydesign,providedexcellentRdson andlowgatecharge.WhichaccordswiththeRoHSstandard. Features VDS=60V,ID=35A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V FastSwit

35N06

60VN-ChannelPowerMosfet

Features VDS=60V,ID=35A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V FastSwitching LowONResistance(Rdson≤29mΩ) LowGateCharge LowReversetransfercapacitances 100SinglePulseavalancheenergyTest

HRP35N06K

N-ChannelMOSFETusesadvancedtrenchtechnology

HRP35N06K

60VN-ChannelTrenchMOSFET

ME35N06

N-Channel60-V(D-S)MOSFET

ME35N06T

N-Channel60V(D-S)MOSFET

MTH35N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=55mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTM35N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=55mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.