QPA2309

5.0–6.0GHz100WGaNPowerAmplifier

KeyFeatures •FrequencyRange:5.0–6.0GHz •PSAT(PIN=28dBm):50dBm •PAE(PIN=28dBm):47 •PowerGain(PIN=28dBm):22dB •Bias:VD=50V,IDQ=600mA •PackageDimensions:7.0x7.0x0.82mm

QPA2309EVB

5.0–6.0GHz100WGaNPowerAmplifier

KeyFeatures •FrequencyRange:5.0–6.0GHz •PSAT(PIN=28dBm):50dBm •PAE(PIN=28dBm):47 •PowerGain(PIN=28dBm):22dB •Bias:VD=50V,IDQ=600mA •PackageDimensions:7.0x7.0x0.82mm

RM2309E

P-ChannelEnhancementModePowerMOSFET

GeneralFeatures ESDRating:2000VHBM Highpowerandcurrenthandingcapability Leadfreeproductisacquired Surfacemountpackage VDS=-30V,ID=-3.5A RDS(ON)

RN2309

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications Withbuilt-inbiasresistors Simplifycircuitdesign Reduceaquantityofpartsandmanufacturingprocess ComplementarytoRN1307~RN1309

RSZ-2309

1WattSMDMiniatureIsolatedSingleOutput

RSZ-2309HP

1WattSMDMiniatureIsolatedSingleOutput

SCH2309

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

SI2309A

SOT-23-3LPlastic-EncapsulateMOSFETS

Features VDS(V)=-60V ID=-1.25A(VGS=-10V) RDS(ON)

SI2309A

SOT-23-3LPlastic-EncapsulateMOSFETS

Features VDS(V)=-60V ID=-1.25A(VGS=-10V) RDS(ON)

SI2309BDS

60VP-ChannelPowerMOSFET

GeneralFeatures ®Vos=60VIo=-16A Rosin)