SOT-23-3L Plastic-Encapsulate MOSFETS

Features VDS (V) =-60V ID =-1.25 A (VGS =-10V) RDS(ON)

文件：2.01094 Mbytes 页数：6 Pages

UMW

友台半导体

SOT-23-3L Plastic-Encapsulate MOSFETS

Features VDS (V) =-60V ID =-1.25 A (VGS =-10V) RDS(ON)

文件：1.79251 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

P-Channel 60-V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：1.12233 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

场效应管

HXY MOSFET

华轩阳电子

MOS场效应

JSMICRO

杰盛微