丝印：PJM；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：PJM；Package：DO-214AB；Surface Mount Transient Voltage Suppressors (TVS)

文件：1.68763 Mbytes 页数：7 Pages

SOCAY

硕凯股份

丝印：PJMT；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low induct0ance 3000W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature sol

文件：2.89053 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：K12；Package：SOT-23；N-Enhancement Field Effect Transistor

文件：2.93609 Mbytes 页数：8 Pages

PJSEMI

平晶半导体

N- Enhancement Mode Field Effect Transistor

文件：1.44682 Mbytes 页数：7 Pages

PJSEMI

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丝印：03N10；Package：SOT-89；N-Channel MOSFET

文件：1.73287 Mbytes 页数：5 Pages

PJSEMI

平晶半导体

丝印：W10；Package：SOT-89；N- Enhancement Mode Field Effect Transistor

文件：2.12693 Mbytes 页数：6 Pages

PJSEMI

平晶半导体

P-Enhancement Field Effect Transistor

文件：889.62 Kbytes 页数：5 Pages

PJSEMI

平晶半导体

P Enhancement Field Effect Transistor

文件：1.41704 Mbytes 页数：6 Pages

PJSEMI

平晶半导体

丝印：C27；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

文件：1.49395 Mbytes 页数：7 Pages

PJSEMI

平晶半导体