N- Enhancement Mode Field Effect Transistor

文件：1.44682 Mbytes 页数：7 Pages

PJSEMI

平晶半导体

N-Channel Enhancement Mode Power MOSFET

Pingjing

平晶微

N-Channel 650 V (D-S) MOSFET

文件：1.08613 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

文件：161.17 Kbytes 页数：11 Pages

Samhop

三合微科

FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

文件：385.58 Kbytes 页数：12 Pages

Infineon

英飞凌