600V N-Channel MOSFETS

Features - 600V,11A, RDS(ON) =370mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available - High efficient switched mode power supplies Applications - LED Lighting - Adapter/charger

文件：1.14072 Mbytes 页数：5 Pages

POTENS

博盛半导体

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC0) for target application

文件：262.52 Kbytes 页数：12 Pages

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

文件：151.66 Kbytes 页数：12 Pages

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating; RoHS compliant • Qualified accordi

文件：152.55 Kbytes 页数：12 Pages

INFINEON

英飞凌