isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

TrenchMOS logic level FET

Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). Features ■ Low on-state resistance ■ 2.5 V gate drive. Applications ■ Linear regulator for

文件：252.6 Kbytes 页数：13 Pages

PHI

PHI

TrenchMOS logic level FET

Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). Features ■ Low on-state resistance ■ 2.5 V gate drive. Applications ■ Linear regulator for

文件：252.6 Kbytes 页数：13 Pages

PHI

PHI

con

NEXPERIA

安世

上传：北京天阳诚业科贸有限公司

NA

Nexperia/安世

上传：深圳市斯普仑科技有限公司