首页 >PHP21N06LT/B>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOSÔtransistorLogiclevelFET FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOSÔtransistorLogiclevelFET FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
详细参数
- 型号:
PHP21N06LT/B
- 功能描述:
TRANSISTOR UNIVERSAL MOSFET SOT
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
NXP |
23+ |
TO2203 |
9000 |
原装正品,支持实单 |
询价 | ||
NXP |
23+ |
TO2203 |
8000 |
只做原装现货 |
询价 | ||
NXP |
23+ |
TO2203 |
7000 |
询价 | |||
PH |
24+ |
TO-220-3 |
8866 |
询价 | |||
NXP |
2017+ |
TO220 |
6528 |
只做原装正品假一赔十! |
询价 | ||
NXP |
1701+ |
TO-220 |
7500 |
只做原装进口,假一罚十 |
询价 | ||
NXP |
17+ |
TO-220 |
9888 |
全新原装现货 |
询价 | ||
NXP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
NXP |
1000 |
19+ |
8000 |
TO-220 |
询价 |
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