TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHM21NQ15T in SOT685-1 (QLPAK). Features ■SOT96 (SO8) footprint compatible ■Low thermal resistance ■Surface mount package ■Low profile

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PHI

飞利浦

TrenchMOS™ standard level FET

Description\nN-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:\n\nPHM21NQ15T in SOT685-1 (QLPAK). ■SOT96 (SO8) footprint compatible\n■Low thermal resistance\n■Surface mount package\n■Low profileApplications\n■DC-DC converter primary side switching\n■Portable equipment applications;

恩XP

恩智浦

NEXPERIA
con

NEXPERIA

安世

上传：北京天阳诚业科贸有限公司

JST
N/A

JST

JST集团

上传：深圳市云泰半导体科技有限公司二部

JST/日压
CONN

JST/日压

上传：深圳市艾泽电子有限公司