N-channel TrenchMOS standard level FET

文件：360.87 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS logic level FET

文件：193.31 Kbytes 页数：12 Pages

恩XP

TrenchMOS logic level FET

文件：236.07 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

文件：100.07 Kbytes 页数：12 Pages

恩XP

包装：散装 类别：盒子，外壳，机架 盒配件 描述：LATCH HANDLE PADLOCKING 1PT

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

包装：散装 类别：盒子，外壳，机架 盒配件 描述：LATCH HANDLE PADLOCKING 1PT

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

PHK13N03LT - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Low conduction losses due to low on-state resistance\n·Simple gate drive required due to low gate charge\n·Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世

PHK18NQ03LT - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·High efficiency due to low switching and conduction losses\n·Suitable for logic level gate drive sources;

Nexperia

安世