N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

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VBSEMI

微碧半导体

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L

文件：462.27 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

TrenchMOS standard level FET

文件：236.27 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

文件：360.87 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世