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MJE13009

12AMPERENPNSILICONPOWERTRANSISTOR400VOLTS100WATTS

SWITCHMODESeriesNPNSiliconPowerTransistors TheMJE13009isdesignedforhigh–voltage,high–speedpowerswitchinginductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedfor115and220VswitchmodeapplicationssuchasSwitchingRegulators,Inverters,MotorControls,Sol

MotorolaMotorola, Inc

摩托罗拉

MJE13009

NPNSILICONPOWERTRANSISTOR

SWITCHMODE™Series NPNSiliconPowerTransistors TheMJE13009isdesignedforhigh−voltage,high−speedpowerswitchinginductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulators,Inverters,MotorControls,S

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE13009

SILICONNPNSWITCHINGTRANSISTOR

DESCRIPTION TheMJE13009isamultiepitaxialmesaNPNtransistor.ItismountedinJedecTO-220plasticpackage,intendedforuseinmotorcontrols,switchingregulators,deflectioncircuits,etc. ■SGS-THOMSONPREFERREDSALESTYPE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MJE13009

POWERTRANSISTORS(12A,300-400V,100W)

SWITCHMODESERIESNPNPOWERTRANSISTORS 12AMPERETRANSISTOR300-400VOLTS100WATTS

MOSPEC

MOSPEC

MJE13009A

NPNMJESERIESTRANSISTORS

SISEMICShenzhen SI Semiconductors Co.,LTD.

赛恩半导体深圳市赛恩半导体有限公司

MJE13009D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION TheUTCMJE13009Disahighvoltagefast-switchingNPNpowertransistor.Itischaracterizedbyhighbreakdownvoltage,highcurrentcapability,highswitchingspeedandhighreliability.TheUTCMJE13009Disintendedtobe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MJE13009F

HighVoltageSwitchModeApplication

HighVoltageSwitchModeApplication •HighSpeedSwitching •SuitableforSwitchingRegulatorandMotorControl

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE13009F

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) ·CollectorSaturationVoltage:VCE(sat)=1.5(Max)@IC=8.0A ·SwitchingTime:tf=0.7μs(Max.)@IC=8.0A APPLICATIONS ·Designedforuseinhigh-voltage,high-speed,powerswitchingininductivecircuit,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE13009F

TRIPLEDIFFUSEDNPNTRANSISTOR

SWITCHINGREGULATORAPPLICATION. HIGHVOLTAGESWITCHINGAPPLICATION. HIGHSPEEDDC-DCCONVERTERAPPLICATION. FEATURES •ExcellentSwitchingTimes:ton=1.1S(Max.),tf=0.7S(Max.),atIC=8A •HighCollectorVoltage:VCBO=700V.

KECKEC CORPORATION

KEC株式会社

MJE13009G

NPNSiliconPowerTransistors

SWITCHMODE™Series NPNSiliconPowerTransistors TheMJE13009isdesignedforhigh−voltage,high−speedpowerswitchinginductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulators,Inverters,MotorControls,S

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE13009G

12AMPERENPNSILICONPOWERTRANSISTOR400VOLTS??100WATTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE13009-K

SWITCHMODESERIESNPNSILICONPOWERTRANSISTORS

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MJE13009L

MJELOWVOLTAGESERIESTRANSISTORS

ETC1List of Unclassifed Manufacturers

未分类制造商

MJE13009P

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS Purpose:Highfrequencyelectroniclightingballastapplications.

FS

First Silicon Co., Ltd

MJE13009-P

SWITCHMODESERIESNPNSILICONPOWERTRANSISTORS

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MJE13009-Q

NPNBIPOLARPOWERTRANSISTORFORSWITCHINGAPPLICATIONS

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MJF13009

SiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) •CollectorSaturationVoltage:VCE(sat)=1.5(Max)@IC=8.0A •SwitchingTime:tf=0.7μs(Max.)@IC=8.0A APPLICATIONS •Designedforuseinhigh-voltage,high-speed,powerswitchingininductivecircuit,theyar

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJF13009

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) •CollectorSaturationVoltage:VCE(sat)=1.5(Max)@IC=8.0A •SwitchingTime:tf=0.7μs(Max.)@IC=8.0A APPLICATIONS •Designedforuseinhigh-voltage,high-speed,powerswitchingininductivecircuit,theyar

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

P13009

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 ComputerSwitchPowerSupply

JINGDAOShenzhen Jingdao Electronic Co.,Ltd

晶道深圳市晶道电子有限公司

P13009A

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 ComputerSwitchPowerSupply

JINGDAOShenzhen Jingdao Electronic Co.,Ltd

晶道深圳市晶道电子有限公司

详细参数

  • 型号:

    PHE13009

  • 功能描述:

    两极晶体管 - BJT RAIL PWR-MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
PH
08+(pbfree)
SOT78TO-220AB
8866
询价
PHILIPS
2017+
TO-220
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
PHILIPS
1305+
TO-220
12000
公司特价原装现货
询价
ST
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
PH
23+
TO-220AB
21000
全新原装
询价
NXP
2016+
TO220
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
PH
16+
TO-220
10000
全新原装现货
询价
PH
2020+
TO-220
350000
100%进口原装正品公司现货库存
询价
WeEnSemiconductorsCo./Lt
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
PHI
2001
TO220/3
100
原装现货海量库存欢迎咨询
询价
更多PHE13009供应商 更新时间2024-5-24 15:30:00