SWITCHMODE™ Series

NPN Silicon Power Transistors

The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Features

• VCEO(sus) 400 V and 300 V

• Reverse Bias SOA with Inductive Loads @ TC = 100°C

• Inductive Switching Matrix 3 to 12 Amp, 25 and 100°C tc @ 8 A, 100°C is 120 ns (Typ)

• 700 V Blocking Capability

• SOA and Switching Applications Information

• Pb−Free Package is Available*

MJE13009G属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安森美半导体公司制造生产的MJE13009G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。