PHD55N03

Marking：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

PHD55N03LT

N-channel TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance •Logiclevelcompatible Appl

PHD55N03LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHD55N03LTA

N-channel enhancement mode field-effect transistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP55N03LTAinaSOT78(TO-220AB) PHB55N03LTAinaSOT404(D2-PAK) PHD55N03LTAinaSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching.

PHP55N03LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance •Logiclevelcompatible Appl

PHP55N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP55N03LTA

N-channelenhancementmodefield-effecttransistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP55N03LTAinaSOT78(TO-220AB) PHB55N03LTAinaSOT404(D2-PAK) PHD55N03LTAinaSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching.

PHP55N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PJD55N03

30VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@16A

SDB55N03L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package.