丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：250.37 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.52 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible Appl

文件：107.39 Kbytes 页数：11 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching.

文件：296.3 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS transistor Logic level FET

恩XP

恩智浦

N-channel enhancement mode field-effect transistor

恩XP

恩智浦