丝印：PHB；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：PHB；Package：DO-214AB；Surface Mount Transient Voltage Suppressors (TVS)

文件：1.68763 Mbytes 页数：7 Pages

SOCAY

硕凯股份

Short Stroke Pushbutton Switches

Features/Benefits • Momentary or latching action • Low cost, reliable contact design • 2 & 4 pole configurations • Sealed contacts • Optional buttons • RoHS compliant design Typical Applications • Computers and peripherals • Instrumentation and measurement equipment • Non-power, on-o

文件：394.13 Kbytes 页数：3 Pages

CK-COMPONENTS

力特

Short Stroke Pushbutton Switches

Features/Benefits • Momentary or latching action • Low cost, reliable contact design • 2 & 4 pole configurations • Sealed contacts • Optional buttons • RoHS compliant design Typical Applications • Computers and peripherals • Instrumentation and measurement equipment • Non-power, on-o

文件：394.13 Kbytes 页数：3 Pages

CK-COMPONENTS

力特

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Avalanche ruggedness rated ■ Logic level compatible ■ Surface mount package. Applications ■ DC to DC converters ■

文件：331.22 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.48 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS??logic level FET

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB101NQ03LT in SOT404 (D2-PAK) PHD101NQ03LT in SOT428 (D-PAK). Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as

文件：280.6 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：306.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ Ge

文件：94.98 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

文件：186.47 Kbytes 页数：12 Pages

恩XP