Radar Pulsed Power Transistor 30W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：100.04 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor, 3OW, lms Pulse, 10 Duty 3.1 - 3.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P

文件：149.74 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：100.66 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor, SW, 300ms Pulse, 10 Duty 3.1 - 3.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Effkiency Interdigitated Geometty • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Pa

文件：153.43 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：100.66 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor, 65W, 1OOms Pulse, 10 Duty 3.1 - 3.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • HermeticMetaVCeramic Pac

文件：153.76 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor, 9W, 300us Pulse, 10 Duty 3.1 - 3.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package

文件：139.56 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：99.2 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：108.01 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 20W,100ms Pulse,10 Duty 3.1-3.5 GHz

Features • NPN Silicon Microwave Power Transistors • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic

文件：157.59 Kbytes 页数：2 Pages

MACOM