Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：100.66 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor, SW, 300ms Pulse, 10 Duty 3.1 - 3.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Effkiency Interdigitated Geometty • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Pa

文件：153.43 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty

文件：100.66 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor

文件：100.66 Kbytes 页数：2 Pages

MA-COM

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configu;

MACOM

包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 65V

MACOM Technology Solutions