NPN/NPN resistor-equipped transistors; R1 = 22 kOMH, R2 = 22 kOHM

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver

文件：56.43 Kbytes 页数：8 Pages

PHI

PHI

NPN/NPN resistor-equipped transistors; R1 = 22 k廓, R2 = 22 k廓

General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design

文件：143.83 Kbytes 页数：8 Pages

恩XP

PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：919.36 Kbytes 页数：15 Pages

NEXPERIA

安世

PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：917.23 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：10；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

1.1 General description NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications Table 1. Pr

文件：912.36 Kbytes 页数：16 Pages

NEXPERIA

安世

NPN/NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

General description NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design ■ A

文件：144.76 Kbytes 页数：8 Pages

恩XP

NPN/NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current periphera

文件：54.64 Kbytes 页数：8 Pages

PHI

PHI

NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current periphera

文件：55.89 Kbytes 页数：8 Pages

PHI

PHI

NPN resistor-equipped transistors; R1 = 10 kohm, R2 = 10 kohm

DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduce

文件：55.81 Kbytes 页数：8 Pages

PHI

PHI

NPN/NPN resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver

文件：144.65 Kbytes 页数：8 Pages

恩XP