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TPCC8001-H

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCF8001

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=19mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=8S(typ.) •Lowleakagecurrent:IDSS=10μA(max.)(VDS=30V) •Enhancementmode:Vth=1.3to2.5V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCM8001-H

HighSpeedandHighEfficiencyDC-DCConverters,NotebookPCApplications,PortableEquipmentApplications

High-EfficiencyDC/DCConverterApplications NotebookPCApplications Portable-EquipmentApplications •Smallfootprintduetoasmallandthinpackage •High-speedswitching •Smallgatecharge:QSW=6.0nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=7mΩ(typ.) •Highforwardtr

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCM8001-H

TOSHIBAFieldEffectTransistorSiliconN-ChannelMOSType(Ultra-High-SpeedU-MOSIII)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8001-H

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(UltraHighspeedU-MOSIII)

HighEfficiencyDC/DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=3.6nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=13mΩ(typ.) •Highforwardt

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TR8001

868.35MHzHybridTransceiver

rfm

RF Monolithics, Inc

TR8001

868.35MHzHybridTransceiver

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

U8001A

SingleOutputDCPowerSupplies

KEYSIGHTKeysight Technologies

是德科技是德科技(中国)有限公司

UP8001A

Li-ion/LiPolymerBatteryCharger

UPI

uPI Semiconductor Corp

UPC8001

IFAMPLIFIERICWITHON-CHIPMIXERFORDIGITALCELLULARPHONES

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

产品属性

  • 产品编号:

    PDV-P8001

  • 制造商:

    Advanced Photonix

  • 类别:

    传感器,变送器 > 光学传感器 - 光检测器 - CdS 电池

  • 包装:

    散装

  • 波长:

    520nm

  • 电压 - 最大值:

    150Vpk

  • 不同光照时槽电阻:

    在 10 勒克斯时为 3 ~ 11 千欧

  • 工作温度:

    -30°C ~ 75°C(TA)

  • 安装类型:

    通孔

  • 封装/外壳:

    径向

  • 描述:

    CDS PHOTORESIST 3K-11KOHM 5.10MM

供应商型号品牌批号封装库存备注价格
ADVANCEDPHOTONIX
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
LUNA
20+
传感器
4796
就找我吧!--邀您体验愉快问购元件!
询价
ADVANCED PHOTONIX
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
ADVANCEDPHOTONIXINC
23+
OHM4.20MM
98326
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
2406+
OHM4.20MM
650
诚信经营!进口原装!量大价优!
询价
更多PDV-P8001供应商 更新时间2025-7-21 17:40:00