PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：236.95 Kbytes 页数：19 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：29；Package：SC-59A；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：260.98 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 10 k廓

General description NPN resistor-equipped transistors. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs Applications ■ General-purpose switching and amplification ■ Circuit drivers ■ Inverter and interface circuits

文件：147.24 Kbytes 页数：11 Pages

恩XP

NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 10 k廓

General description NPN resistor-equipped transistors. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs Applications ■ General-purpose switching and amplification ■ Circuit drivers ■ Inverter and interface circuits

文件：147.24 Kbytes 页数：11 Pages

恩XP

丝印：G6；Package：SC-101；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：260.98 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：236.95 Kbytes 页数：19 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00111110；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 47 k廓, R2 = 10 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：751.33 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：236.95 Kbytes 页数：19 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：TC144V；Package：SC-43A；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：260.98 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 10 k廓

General description NPN resistor-equipped transistors. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs Applications ■ General-purpose switching and amplification ■ Circuit drivers ■ Inverter and interface circuits

文件：147.24 Kbytes 页数：11 Pages

恩XP