丝印：00111110；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 47 k廓, R2 = 10 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：751.33 Kbytes 页数：12 Pages

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NPN resistor-equipped transistor; R1 = 47 k廓, R2 = 10 k廓

文件：511.02 Kbytes 页数：11 Pages

PHI

PHI

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW 3DFN

Nexperia USA Inc.

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：260.98 Kbytes 页数：12 Pages

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PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：236.95 Kbytes 页数：19 Pages

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