PDTC115TM

NPN resistor-equipped transistors; R1 =100 kW, R2 open

Generaldescription NPNresistor-equippedtransistors. Features ■Built-inbiasresistor ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts Applications ■General-purposeswitchingandamplification ■Circuitdrivers ■Inverterandinterfacecircuits

PHI

PDTC115TM

丝印：G5；Package：SC-101；NPN resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistor *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTC115TM

PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTC115TM

NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open; • Built-in bias resistor\n• Reduces component count\n• Simplifies circuit design\n• Reduces pick and place costs\n• AEC-Q101 qualified\n;

NPN resistor-equipped transistors.\n

PDTC115TMB

NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open; • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n;

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TMB.\n

PDTC115TMB

丝印：00110010；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 100 k廓, R2 = open

PDTC115TM,315

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V DFN1006-3

ETC

PDTC115TMB,315

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW 3DFN

ETC