PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓

文件：138.19 Kbytes 页数：10 Pages

恩XP

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓

文件：138.19 Kbytes 页数：10 Pages

恩XP

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓

文件：138.19 Kbytes 页数：10 Pages

恩XP

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ

恩XP

恩智浦

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD113ZT. • 500 mA output current capability\n• Reduces pick and place costs\n• Built-in bias resistors\n• ±10 % resistor ratio tolerance\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Reduces component count;

Nexperia

安世

500 mA, 50 V PNP resistor-equipped transistors

PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. • 500 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• ±10 % resistor ratio tolerance\n• AEC-Q101 qualified\n• High temperature applications up to 175°C;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：SC-70，SOT-323；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 0.425W

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司