Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓

文件：138.19 Kbytes 页数：10 Pages

恩XP

50 V, 500 mA NPN resistor-equipped transistors

Features and benefits  500 mA output current capability  Built-in bias resistors   10 resistor ratio tolerance  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of sold

文件：1.96439 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 500 mA PNP resistor-equipped transistors

Features and benefits  500 mA output current capability  Built-in bias resistors   10 resistor ratio tolerance  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of sold

文件：2.00195 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

文件：2.00194 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司