PDTB113ZQA_SER

50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB113ZT

丝印：XK；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription 500mAPNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-Mounted Device(SMD)plasticpackage. NPNcomplement:PDTD113ZT. 2.Featuresandbenefits •500mAoutputcurrentcapability •Reducespickandplacecosts •Built-inbiasresistors •

PDTB113ZU

丝印：ZH；Package：SOT323；500 mA, 50 V PNP resistor-equipped transistors

Generaldescription PNPResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitd

PDTB113ZU

500 mA, 50 V NPN resistor-equipped transistors

Features 500mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount 10resistorratiotolerance AEC-Q101qualified Hightemperatureapplications upto175°C

PDTB113ZU

丝印：ZH；Package：SOT323；500 mA, 50 V PNP resistor-equipped transistors

Features 500mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount 10resistorratiotolerance AEC-Q101qualified Hightemperatureapplications upto175°C

PDTB113E

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

ETC

PDTB113EK

Low VCEsat (BISS) transistors

PHI

PDTB113EK

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

ETC

PDTB113EQA

丝印：000001；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

PDTB113ES

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

ETC