PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

文件：92.59 Kbytes 页数：14 Pages

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PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampl

文件：181.48 Kbytes 页数：14 Pages

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丝印：55；Package：SC-70；PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：863.35 Kbytes 页数：18 Pages

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丝印：55；Package：SC-70；PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device(SMD) plastic package. NPN complement: PDTC114YU-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduce

文件：209.74 Kbytes 页数：9 Pages

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安世

丝印：03；Package：SOT-416；PNP resistor-equipped transistor

文件：66.38 Kbytes 页数：8 Pages

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PNP resistor-equipped transistor

文件：54.68 Kbytes 页数：8 Pages

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PHI

PNP resistor-equipped transistor

文件：69.89 Kbytes 页数：8 Pages

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丝印：-03；Package：SOT-23；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

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PHI

丝印：-03；Package：SOT-323；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

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PHI

NPN resistor-equipped transistors; R1 = 10 kW, R2 = open

文件：88.74 Kbytes 页数：11 Pages

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