20V N-Channel MOSFETs

 2 0 V 65 A , RDS(ON) 4.9 m Ω @VGS = 4.5 V  Improved dv/dt capability  Green Device Available  Suit for 1.8V Gate Drive Applications Features Applications  Load Switch  POL Applications  SMPS 2nd SR  Li-Battery Protection

文件：1.0233 Mbytes 页数：5 Pages

POTENS

博盛半导体

MOSFETs

Potens

博盛半导体

PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2

General Description The circuit consists of a reference-, a- and n-counter, a dual modulus control logic, a phase detector with charge pump output and a serial control logic. The setting of the operating mode and the selection of the counter ratios is done serially at the ports CLK, DA and EN. T

文件：760.48 Kbytes 页数：35 Pages

SIEMENS

西门子

GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.56 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.56 Kbytes 页数：4 Pages

RFMD

威讯联合