HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

文件：251.86 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

文件：251.86 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

文件：251.86 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

文件：251.86 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

15W 13.6V 870MHz LDMOS in powerSO-10RF plastic package

The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, lin • Excellent thermal stability\n• Common source configuration\n• POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC European directive;

ST

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TRANS RF N-CH FET POWERSO-10RF

ST

意法半导体

射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC RF PWR TRANSISTOR PWRSO-10RF

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条直引线）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF N-CH FET POWERSO-10RF

STMICROELECTRONICS

意法半导体