Sunlight, Daylight Readable LCD : 1000 nlts

文件：2.30415 Mbytes 页数：2 Pages

AAEON

研扬科技

RF power transistor the LdmoST plastic family

Description The PD85004 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85004’s superior gain and

文件：662.32 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Excellent thermal stability

Description The PD85006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006-E boasts the excell

文件：274.49 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

RF power transistor the LdmoST plastic family

Description The PD85006L-E is a common source N-channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006L-E boasts the exce

文件：568.24 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

4W 13.6V 870MHz LDMOS in SOT89 plastic package

• In compliance with the 2002/95/EC european directive\n• Supplied in tape and reel\n• Excellent thermal stability\n• Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz• Common source configuration\n• ESD protection\n• Plastic package;

ST

意法半导体

6W 13.6V 870MHz LDMOS in PowerFLAT plastic package

• In compliance with the 2002/95/EC european directive\n• Excellent thermal stability\n• POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V• Common source configuration\n• ESD protection\n• Plastic package;

ST

意法半导体

6W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 870MHZ PWRSO-10RF

STMICROELECTRONICS

意法半导体

Package：8-PowerVDFN；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF POWER POWERFLAT5X5

STMICROELECTRONICS

意法半导体