RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

15W 12.5V 500MHz LDMOS，PowerSO-10RF塑料封装

The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, li • Excellent thermal stability \n• Common source configuration \n• POUT =15 W with 14dB gain @ 500 MHz/12.5 V;

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICS

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF N-CH FET POWERSO-10RF

STMICROELECTRONICS

意法半导体