RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD55003 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent g

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STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind

文件：473.99 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent

文件：468.27 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind

文件：473.99 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent

文件：468.27 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent

文件：468.27 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind

文件：473.99 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

3W 12.5V 500MHz LDMOS，PowerFLAT塑料封装

The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain, linear • Excellent thermal stability \n• Common source configuration \n• POUT=3 W mith 17dB gain@500 MHz/12.5 V \n• New leadless plastic package \n• ESD protection \n• Supplied in tape and reel of 3 K units \n• In compliance with 2002/95/EC european directive;

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RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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FET RF 40V 500MHZ PWRSO-10

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意法半导体