8.0A BRIDGE RECTIFIER

Features • Low Forward Voltage Drop, High Current Capability • Surge Overload Rating to 300A Peak • Ideal for Printed Circuit Board Applications • Case to Terminal Isolation Voltage 1500V • Plastic Material: UL Flammability Classification Rating 94V-0 • UL Listed Under Recognized Component I

文件：70.59 Kbytes 页数：2 Pages

DIODES

美台半导体

SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes)

文件：26.34 Kbytes 页数：2 Pages

RECTRON

丽正

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨