丝印：AE；Package：HUSON3；100 V, 5.2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS9410PA. Features and benefits ■ Low collector-emitter saturatio

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 5.2 A NPN low VCEsat (BISS) transistor

文件：176.2 Kbytes 页数：15 Pages

PHI

飞利浦

100 V, 5.2 A NPN low V_CEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.\n PNP complement: PBSS9410PA. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Leadless small SMD plastic package with m;

Nexperia

安世

Package：3-PowerUDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 5.2A 3HUSON

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司