丝印：A9；Package：HUSON3；12 V, 6 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4612PA. Features and benefits ■ Low collector-emitter saturatio

文件：277.33 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

12 V, 6 A PNP low VCEsat (BISS) transistor

文件：163.03 Kbytes 页数：15 Pages

PHI

飞利浦

PBSS5612PA - 12 V, 6 A PNP low VCEsat (BISS) transistor

12 V, 6 A PNP low VCEsat (BISS) transistor - PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4612PA. ·Low collector-emitter saturation voltage VCEsat\n·High collector current capability IC and ICM\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n·Exposed heat sink for excellent thermal and electrical conductivity\n·Leadless small SMD plastic package with medium;

Nexperia

安世

Package：3-PowerUDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 12V 6A 3HUSON

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司