General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4612PA.

Features and benefits

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability IC and ICM

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

■ Exposed heat sink for excellent thermal and electrical conductivity

■ Leadless small SMD plastic package with medium power capability

Applications

■ Loadswitch

■ Battery-driven devices

■ Power management

■ Charging circuits

■ Power switches (e.g. motors, fans)

PBSS5612PA属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安世半导体(中国)有限公司制造生产的PBSS5612PA晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。