丝印：3F；Package：SOT23；20 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Q

文件：234.68 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 2 A PNP low VCEsat transistor

PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• Higher efficiency leading to less heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 2A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 2 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：296.15 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMCU-XXXX EMI/RFI COMMON MODE LINE FILTERS

文件：125.12 Kbytes 页数：5 Pages

PMI