20 V, 1 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. NPN complement: PBSS4120T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

文件：47.72 Kbytes 页数：7 Pages

PHI

飞利浦

丝印：3K；Package：SOT23；20 V, 1 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative for MOSFETs in specific applications. APPLICATIONS •Power manage

文件：324.94 Kbytes 页数：8 Pages

NEXPERIA

安世

PNP low VCEsat (BISS) transistor 20 V, 1 A

文件：125.93 Kbytes 页数：7 Pages

PHI

飞利浦

20 V; 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4120T • Small SMD plastic package\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Higher efficiency to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 1A TO236AB

Nexperia USA Inc.