PBSS5120T

20 V; 1 A PNP low VCEsat (BISS) transistor; • Small SMD plastic package\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Higher efficiency to less heat generation\n• AEC-Q101 qualified\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4120T\n

PBSS5120T

20 V, 1 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPBISStransistorinaSOT23plasticpackageprovidingultralowVCEsatandRCEsatparameters. NPNcomplement:PBSS4120T. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtolessheatgeneration

PBSS5120T

丝印：3K；Package：SOT23；20 V, 1 A PNP low VCEsat (BISS) transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequirements •CosteffectivealternativeforMOSFETsinspecificapplications. APPLICATIONS •Powermanage

PBSS5120T_15

PNP low VCEsat (BISS) transistor 20 V, 1 A

PBSS5120T,215

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 1A TO236AB

Nexperia USA Inc.

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