丝印：ZE；Package：SOT23；40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced

文件：185.33 Kbytes 页数：8 Pages

NEXPERIA

安世

40 V; 2 A NPN low VCEsat transistor

NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS5240T-Q • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High collector current gain (hFE) at high IC •High efficiency leading to reduced heat generation •Reduced printed-circuit board area requirements. APPLICATIONS •Power management: –DC-

文件：549.35 Kbytes 页数：10 Pages

NEXPERIA

安世

40 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capa

文件：676.63 Kbytes 页数：12 Pages

NEXPERIA

安世