40 V low VCEsat NPN transistor

DESCRIPTION NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High

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恩XP

丝印：42；Package：SOT666；40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High collector current gain (hFE) at high IC •High efficiency leading to reduced heat generation •Reduced printed-circuit board area requirements. APPLICATIONS •Power management: –DC-

文件：549.35 Kbytes 页数：10 Pages

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40 V low VCEsat NPN transistor

NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE ) at high IC\n• High efficiency leading to reduced heat generation\n• Reduced printed-circuit board area requirements.\n• AEC-Q101 qualified;

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40 V low VCEsat NPN transistor

恩XP

恩智浦

Package：SOT-563，SOT-666；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 2A SOT666

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